PART |
Description |
Maker |
EMC2DXV5T5G EMC4DXV5T1 EMC4DXV5T1G EMC4DXV5T5 EMC4 |
Dual Common Base-Collector Bias Resistor Transistors(双共基极-集电极偏置电阻晶体管) 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR Dual Common Base−Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
|
ONSEMI[ON Semiconductor]
|
EMC4DXV5T1G EMC3DXV5T1G EMC3DXV5T5G EMC2DXV5T1G |
Dual Common Base−Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR Dual Common Base-Collector Bias Resistor Transistors
|
ON Semiconductor
|
NSTB1005DXV5T1G |
Dual Common Base-Collector Bias Resistor Transistors
|
ON Semiconductor
|
UMC2NT1-D |
Dual Common Base-Collector Bias Resistor Transistors
|
ON Semiconductor
|
NSTB1005DXV5T1 |
(NSTB1005DXV5T1 / NSTB1005DXV5T5) Dual Common Base-Collector Bias Resistor Transistors
|
ON Semiconductor
|
2SC4247 |
Transistor Silicon NPN Epitaxial Planar Type TV Tuner, UHF Oscillator Applications (common collector)
|
TOSHIBA
|
NSB1010XV5T5 NSB1010XV5 |
Dual Digital Transistor Dual Common Base−Collector Bias Resistor Transistors
|
ONSEMI[ON Semiconductor]
|
2N6515 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW.
|
USHA India LTD
|
2SB1561-Q |
Collector Current Capability IC=-2A Collector Emitter Voltage VCEO=-60V
|
TY Semiconductor Co., Ltd
|
C2611 |
Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
|
TY Semiconductor Co., Ltd
|
SMBTA1407 |
NPN Silicon Darlington Transistor High collector current Low collector-emitter saturation voltage
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